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Patent Browser Featured Manufacturing Method for significant reduction of d...
Patent

Method for significant reduction of dislocations for a ve...

2010 6 Figs Manufacturin...

A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of formi...

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A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.

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Patent ID: US-7776636-B2
Publication Date: August 2010
Category: Manufacturing & Industrial
Inventors:
Assignee:
Classification:
Title:
Method for significant reduction of dislocations for a very high A1 composition A1GaN layer
Abstract:
A method for reducing dislocation density between an AlGaN layer and a sapphire substrate involving the step of forming a self-organizing porous AlN layer of non-coalescing column-like islands with flat tops on the substrate.

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